Title :
Self-consistent simulation of hot-carrier damage enhanced gate induced drain leakage
Author :
Schwerin, A. ; Bergner, W. ; Jacobs, H.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
In this work a consistent physical model for gate induced drain leakage (GIDL) and its increase due to oxide charge build-up during hot-carrier (hc) degradation is presented. The model is used to investigate the influence of oxide charge on GIDL characteristics with 2D device simulation. A self-consistent simulation of hc stress is performed. Results for normal drain current reduction and GIDL increase due to oxide charge accumulation are compared to experimental data. An application to drain engineering of a 0.25 mu m device is demonstrated.<>
Keywords :
digital simulation; electronic engineering computing; hot carriers; insulated gate field effect transistors; leakage currents; semiconductor device models; 0.25 mum; MOSFET; band to band tunneling; drain current reduction; drain engineering; hot-carrier damage enhanced gate induced drain leakage; hot-carrier degradation; oxide charge accumulation; oxide charge build-up; physical model; self-consistent simulation; Hot carriers; Insulated gate FETs; Leakage currents; Semiconductor device modeling; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307420
