Title :
Ultra low Cout×Ron photo-relay using depleted drift layer in thin film SOI
Author :
Kitagawa, Mitsuhiko ; Kawamura, Keiko ; Furukawa, Kazuyoshi ; Kuramochi, Nobuichi ; Nakagawa, Akio ; Aizawa, Yoshiaki
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, we propose a new concept of a MOSFET switch for small-outline photo-relays. By applying the concept of depleted drift layer to the thin film SOI MOSFET, the developed photo-relay switch has achieved the lowest Cout×Ron (product of output capacitance and on-state resistance) of 1.87 pFΩ for 26.5V device and 4 pFΩ for 43V device, respectively. These values are the lowest ever reported. The packaged photo-relays achieved low off-state leakage current and low output pin capacitance, being sufficient to be used 2-3 MHz frequency range measuring instrument.
Keywords :
MOSFET; semiconductor relays; semiconductor thin films; silicon-on-insulator; 2 to 3 MHz; 26.5 V; 43 V; MOSFET switch; depleted drift layer; low leakage current; low-output pin capacitance; measuring instrument; off-state leakage current; photo-relay switch; thin film SOI; ultra low Cout×Ron; Capacitance measurement; Current measurement; Electrical resistance measurement; Frequency; Leakage current; MOSFET circuits; Packaging; Switches; Thin film devices; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225304
