Title :
Automatic design of GaAs digital circuits and devices-from process and material parameters to layout
Author :
Parker, A.E. ; Skellern, D.J. ; Mahon, S.J. ; Parrilla, M.L. ; Archer, J.W. ; Batchelor, R.A. ; Griffiths, G.J. ; King, W.D.
Author_Institution :
Electr. Eng., Sydney Univ., NSW, Australia
Abstract :
The design techniques and tools needed to build optimized digital circuits for molecular beam epitaxy (MBE) processes geared to low-noise microwave and millimeter wave applications are described. The design approach commences with input of the fundamental process parameters and design rules. From these, SPICE models suitable for use in the design of both linear and digital circuits are automatically generated. These, in turn, are used to automatically design and lay out basic logic gates. Simplified models of the gates are extracted for use with a mixed-mode simulator. This entire task, from designer entry of parameters, through generation of accurate and simplified models, to layout, can be completed in less than 90 minutes. An overview is given of the design process, the key problems that had to be addressed in its automation are described, and results for a fabricated circuit are shown.<>
Keywords :
III-V semiconductors; circuit layout CAD; digital integrated circuits; gallium arsenide; integrated logic circuits; logic CAD; CAD; GaAs; MBE processes optimised circuits; SPICE models; computer aided design; design techniques; digital circuits; layout; logic circuit design; logic gates; mixed-mode simulator; molecular beam epitaxy; Design optimization; Digital circuits; Gallium arsenide; Microwave devices; Microwave theory and techniques; Millimeter wave circuits; Millimeter wave technology; Molecular beam epitaxial growth; Process design; SPICE;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69344