DocumentCode :
1953723
Title :
Ageing of tunnel junctions formed in oxygen plasma and in air
Author :
Mach, P. ; Rozkosny, Tomas
Author_Institution :
Dept. of Electrotechnol., Czech Tech. Univ. in Prague, Prague, Czech Republic
fYear :
2013
fDate :
8-12 May 2013
Firstpage :
152
Lastpage :
156
Abstract :
Ageing of thin film tunnel junctions of the type Al-Al2O3-Pb in laboratory conditions (24 °C, 65 % RH) was examined. The alumina insulating barrier was formed by two methods: by oxidation of the lower Al electrode in oxygen plasma and by oxidation in air. It was found that the junctions with the alumina barrier formed in plasma aged faster than those with the barrier formed in air. The reason is that the films formed in oxygen plasma are more porous in comparison with the films formed in air and therefore are more prone to oxidation.
Keywords :
MIM structures; ageing; alumina; aluminium; lead; oxidation; porous materials; thin films; tunnelling; Al-Al2O3-Pb; ageing; alumina insulating barrier; electrode; oxidation; oxygen plasma; porous films; temperature 24 degC; thin film tunnel junctions; Aging; Electrodes; Films; Junctions; Plasmas; Resistance; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology (ISSE), 2013 36th International Spring Seminar on
Conference_Location :
Alba Iulia
ISSN :
2161-2528
Type :
conf
DOI :
10.1109/ISSE.2013.6648233
Filename :
6648233
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1953723
بازگشت