DocumentCode
1953723
Title
Ageing of tunnel junctions formed in oxygen plasma and in air
Author
Mach, P. ; Rozkosny, Tomas
Author_Institution
Dept. of Electrotechnol., Czech Tech. Univ. in Prague, Prague, Czech Republic
fYear
2013
fDate
8-12 May 2013
Firstpage
152
Lastpage
156
Abstract
Ageing of thin film tunnel junctions of the type Al-Al2O3-Pb in laboratory conditions (24 °C, 65 % RH) was examined. The alumina insulating barrier was formed by two methods: by oxidation of the lower Al electrode in oxygen plasma and by oxidation in air. It was found that the junctions with the alumina barrier formed in plasma aged faster than those with the barrier formed in air. The reason is that the films formed in oxygen plasma are more porous in comparison with the films formed in air and therefore are more prone to oxidation.
Keywords
MIM structures; ageing; alumina; aluminium; lead; oxidation; porous materials; thin films; tunnelling; Al-Al2O3-Pb; ageing; alumina insulating barrier; electrode; oxidation; oxygen plasma; porous films; temperature 24 degC; thin film tunnel junctions; Aging; Electrodes; Films; Junctions; Plasmas; Resistance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology (ISSE), 2013 36th International Spring Seminar on
Conference_Location
Alba Iulia
ISSN
2161-2528
Type
conf
DOI
10.1109/ISSE.2013.6648233
Filename
6648233
Link To Document