• DocumentCode
    1953803
  • Title

    A new analytical model and the impact of base charge storage on base potential distribution, emitter current crowding and base resistance

  • Author

    Tzu-Yin Chiu ; Tien, P.K. ; Janmye Sung ; Liu, T.-Y.M.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    573
  • Lastpage
    576
  • Abstract
    DC emitter crowding effect is modeled analytically for the first time with minority charge storage taken into account. In contrast with previous work that neglected excess carriers, we find that the solution is well behaved without singularity and base voltage pinning. Expressions for base and collector current, large signal and small signal base resistance are also derived. We prove that excess base charge can be monitored using a split base structure. Conductance between the two split base electrodes is a linear function of collector current, independent of emitter current crowding, and its slope is directly proportional to base transit time.<>
  • Keywords
    bipolar transistors; electric current; electric resistance; minority carriers; semiconductor device models; voltage distribution; DC emitter crowding effect; analytical model; base charge storage; base current; base potential distribution; base resistance; base transit time; collector current; emitter current crowding; excess carriers; minority charge storage; split base structure; Bipolar transistors; Charge carrier processes; Current; Resistance; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307427
  • Filename
    307427