DocumentCode
1953803
Title
A new analytical model and the impact of base charge storage on base potential distribution, emitter current crowding and base resistance
Author
Tzu-Yin Chiu ; Tien, P.K. ; Janmye Sung ; Liu, T.-Y.M.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
573
Lastpage
576
Abstract
DC emitter crowding effect is modeled analytically for the first time with minority charge storage taken into account. In contrast with previous work that neglected excess carriers, we find that the solution is well behaved without singularity and base voltage pinning. Expressions for base and collector current, large signal and small signal base resistance are also derived. We prove that excess base charge can be monitored using a split base structure. Conductance between the two split base electrodes is a linear function of collector current, independent of emitter current crowding, and its slope is directly proportional to base transit time.<>
Keywords
bipolar transistors; electric current; electric resistance; minority carriers; semiconductor device models; voltage distribution; DC emitter crowding effect; analytical model; base charge storage; base current; base potential distribution; base resistance; base transit time; collector current; emitter current crowding; excess carriers; minority charge storage; split base structure; Bipolar transistors; Charge carrier processes; Current; Resistance; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307427
Filename
307427
Link To Document