DocumentCode
1953989
Title
Numerical and experimental results correlation during power MOSFET ageing
Author
Azoui, T. ; Tounsi, P. ; Dupuy, Ph ; Dorkel, J.M. ; Martineau, D.
Author_Institution
LAAS, Toulouse, France
fYear
2012
fDate
16-18 April 2012
Firstpage
42373
Lastpage
42464
Abstract
This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization aging of source terminal. The numerical results were correlated with experiment based on past study.
Keywords
ageing; power MOSFET; semiconductor device metallisation; 3D electro-thermal simulation; metallization aging; power MOSFET ageing; source terminal; vertical power MOSFET; Aging; Conductivity; Degradation; Electrical resistance measurement; Logic gates; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location
Cascais
Print_ISBN
978-1-4673-1512-8
Type
conf
DOI
10.1109/ESimE.2012.6191798
Filename
6191798
Link To Document