Title :
Silicon oxynitride gate dielectrics for scaled CMOS
Author :
Sodini, C.G. ; Krisch, K.S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
In this paper, we present an overview of silicon oxynitride gate dielectrics. We discuss the motivation for using this alternative gate dielectric and describe various techniques by which oxynitrides can be fabricated. The interactions between processing conditions and electrical performance are reviewed, and the tradeoffs between optimization of electrical performance and device reliability are presented. We also discuss some of the reasons for the unique behavior of these dielectrics.<>
Keywords :
CMOS integrated circuits; circuit reliability; dielectric thin films; integrated circuit technology; silicon compounds; SiON; device reliability; dielectric behaviour; electrical performance; process scaling; processing conditions; scaled CMOS; silicon oxynitride gate dielectrics; CMOS integrated circuits; Circuit reliability; Dielectric films; Integrated circuit fabrication; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307436
