Title :
Wet and dry HF-last cleaning process for high-integrity gate oxides
Author :
Werkhoven, C. ; Granneman, E. ; Hendriks, M. ; de Blank, R. ; Verhaverbeke, S. ; Mertens, P. ; Meuris, M. ; Vandervorst, W. ; Heijns, M. ; Philipossian, A.
Author_Institution :
ASM Int., Bilthoven, Netherlands
Abstract :
The suitability of using either a wet HF process or an integrated HF vapor process prior to clustered gate stack formation is compared. When ultra pure chemicals are used for wet chemical pre-cleaning, a systematic improvement of gate oxide integrity is noticeable in case of the integrated HF vapor etching technique. This is attributed to a more effective removal of the low quality wet chemical cleaning oxide and the more controllable initiation of the oxidation process.<>
Keywords :
oxidation; semiconductor technology; surface treatment; HF; HF-last cleaning process; clustered gate stack formation; etching technique; gate oxide integrity; high-integrity gate oxide; integrated HF vapor process; oxidation process; wet HF process; wet chemical pre-cleaning; Oxidation; Semiconductor device fabrication; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307440
