Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications

Author

Ackermann, M. ; Hein, V. ; Weide-Zaage, K.

Author_Institution

X-FAB Semicond. Foundries AG, Erfurt, Germany

fYear

2012

fDate

16-18 April 2012

Firstpage

42374

Lastpage

42495

Abstract

The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.

Keywords

CMOS integrated circuits; circuit optimisation; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; TTF; design optimization; integrated interconnect systems; reliability; robustness; semiconductor applications; simulation-based prediction; thermoelectrical simulations; time-to-failure; Correlation; Foundries; Materials; Robustness; Stress; Stress measurement; electromigration; interconnect; robustness; thermoelectrical simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on

Conference_Location

Cascais

Print_ISBN

978-1-4673-1512-8

Type

conf

DOI

10.1109/ESimE.2012.6191800

Filename

6191800