Title :
Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications
Author :
Ackermann, M. ; Hein, V. ; Weide-Zaage, K.
Author_Institution :
X-FAB Semicond. Foundries AG, Erfurt, Germany
Abstract :
The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.
Keywords :
CMOS integrated circuits; circuit optimisation; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; TTF; design optimization; integrated interconnect systems; reliability; robustness; semiconductor applications; simulation-based prediction; thermoelectrical simulations; time-to-failure; Correlation; Foundries; Materials; Robustness; Stress; Stress measurement; electromigration; interconnect; robustness; thermoelectrical simulation;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location :
Cascais
Print_ISBN :
978-1-4673-1512-8
DOI :
10.1109/ESimE.2012.6191800
