DocumentCode :
1954100
Title :
Front-Channel Hot-Carrier Effect on the Drain-Source Breakdown Voltage in Thin-Film Soi/nmosfet´s
Author :
Zhang, Binglong ; Ma, T.P.
Author_Institution :
Yale University Center for Microelectronic Materials & Structures, and Department of Electrical Engineering, New Haven, Connecticut
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
126
Lastpage :
127
Keywords :
Breakdown voltage; Electron traps; Hot carrier effects; Hot carriers; Low voltage; MOSFET circuits; Spontaneous emission; Stress; Transconductance; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664825
Filename :
664825
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1954100
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