DocumentCode
1954101
Title
Effect of strain and barrier height on performance characteristics of multiquantum well avalanche photodiodes
Author
Gutierrez-Aitken, A.L. ; Goswami, S. ; Chen, Y.C. ; Bhattacharya, P.K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
647
Lastpage
650
Abstract
We have measured electron and hole impact ionization coefficients in strained In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As (0.44>
Keywords
avalanche photodiodes; band structure of crystalline semiconductors and insulators; energy gap; gallium arsenide; impact ionisation; indium compounds; semiconductor quantum wells; GaAs; In/sub 0.15/Ga/sub 0.63/Al/sub 0.22/As; In/sub 0.2/Ga/sub 0.8/As; InGaAs-InAlAs; InP; MQW avalanche photodiodes; band offsets; bandgap; bandstructure; barrier height; compressive strain; electron impact ionization coefficients; high speed devices; hole impact ionization coefficients; low noise applications; multiquantum well; performance characteristics; strained MQW; strained single layers; tensile strain; Avalanche photodiodes; Gallium compounds; Impact ionization; Indium compounds; Quantum wells;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307443
Filename
307443
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