Title :
Effect of strain and barrier height on performance characteristics of multiquantum well avalanche photodiodes
Author :
Gutierrez-Aitken, A.L. ; Goswami, S. ; Chen, Y.C. ; Bhattacharya, P.K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We have measured electron and hole impact ionization coefficients in strained In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As (0.44>
Keywords :
avalanche photodiodes; band structure of crystalline semiconductors and insulators; energy gap; gallium arsenide; impact ionisation; indium compounds; semiconductor quantum wells; GaAs; In/sub 0.15/Ga/sub 0.63/Al/sub 0.22/As; In/sub 0.2/Ga/sub 0.8/As; InGaAs-InAlAs; InP; MQW avalanche photodiodes; band offsets; bandgap; bandstructure; barrier height; compressive strain; electron impact ionization coefficients; high speed devices; hole impact ionization coefficients; low noise applications; multiquantum well; performance characteristics; strained MQW; strained single layers; tensile strain; Avalanche photodiodes; Gallium compounds; Impact ionization; Indium compounds; Quantum wells;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307443
