Title :
Operating characteristics of GaAs/AlGaAs FET-SEED smart pixels
Author :
Woodward, T.K. ; Lentine, A.L. ; Chirovsky, L.M.F. ; Pei, S.S. ; Freund, J.M. ; D´Asaro, L.A. ; Focht, M.F. ; Laskowski, E.J. ; Guth, G.D. ; Smith, L.E.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We have realized monolithic optically addressed integrated circuits. The optical element is a p-i-n multiple quantum well (MQW) device designed for normal incidence operation as both a detector and an optical modulator for 850 nm light. Electronic circuits are realized in GaAs/AlGaAs doped-channel heterojunction field effect transistors (HFETs) with buffered FET logic. Experimental data for various types of circuits are shown that demonstrate 2 Gb/s operation under electrical drive, <50 fJ input optical switching energy at 200 Mb/s, and circuit densities of up to 44 FETs.<>
Keywords :
III-V semiconductors; SEEDs; aluminium compounds; field effect integrated circuits; gallium arsenide; image sensors; integrated optoelectronics; intelligent sensors; optical modulation; photodetectors; semiconductor quantum wells; 2 Gbit/s; 50 fJ; FET-SEED smart pixels; GaAs-AlGaAs; buffered FET logic; doped-channel heterojunction FET; heterojunction field effect transistors; monolithic optically addressed integrated circuits; multiple quantum well device; optical modulator; p-i-n MQW device; Aluminum compounds; FET integrated circuits; Gallium compounds; Image sensors; Integrated optoelectronics; Intelligent sensors; Optical modulation; Photodetectors; Quantum wells; Self-electrooptic-effect devices;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307446
