Title :
Characterization of hot-carrier-induced degradation of MOSFETs enhanced by H/sub 2/O diffusion for multilevel interconnection processing
Author :
Takagi, M.T. ; Yoshii, I. ; Hashimoto, K.
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We investigate enhanced hot-carrier (HC)-induced degradation of MOSFETs due to water-related species diffusing from intermetal oxides. Post-metallization annealing time dependence of the enhanced HC-induced degradation is studied in detail. The results show that the amount of interface traps generated by HC injection is proportional to the concentration of water-related species diffusing adjacent to Si/SiO/sub 2/ interface. Diffusivity of this water-related species is found to be 2.4*10/sup -12/cm/sup 2//sec. Based on the results, diffusing species which enhance HC degradation are identified as H/sub 2/O. In addition, we propose a useful expression to predict the enhanced HC-induced degradation without any unknown parameter.<>
Keywords :
annealing; electron traps; elemental semiconductors; hot carriers; insulated gate field effect transistors; interface electron states; metallisation; semiconductor device testing; semiconductor-insulator boundaries; silicon; silicon compounds; H/sub 2/O; MOSFETs; Si-SiO/sub 2/; Si/SiO/sub 2/ interface; diffusivity; hot-carrier-induced degradation; interface traps; intermetal oxides; multilevel interconnection processing; post-metallization annealing time dependence; water-related species; Annealing; Charge carrier lifetime; Hot carriers; Insulated gate FETs; Interface phenomena; Metallization; Semiconductor device testing; Semiconductor-insulator interfaces; Silicon; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307456
