DocumentCode :
1954355
Title :
Quick on-chip self- and mutual-inductance screen
Author :
Lin, Shen ; Chang, Norman ; Nakagawa, Sam
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fYear :
2000
fDate :
2000
Firstpage :
513
Lastpage :
520
Abstract :
In this paper, based on simulations of top-level interconnects and CMOS devices of industrial 0.18 μm technology, the rules to screen out those inductive interconnects requiring more accurate RLC considerations, and the victim wires potentially having significant inductive noises are developed. The presented criteria constitute a tighter self-inductance screening rule than those found in previously published work. The 2×mutual inductance screening rule is presented and verified. The differences in on-chip inductance consideration, the significant frequency of a trapezoidal pulse, and the circuit modeling of on-chip inductance are also discussed
Keywords :
CMOS digital integrated circuits; inductance; integrated circuit interconnections; integrated circuit modelling; integrated circuit noise; 0.18 micron; CMOS devices; circuit modeling; inductive interconnects; inductive noises; mutual-inductance screen; on-chip inductance screening rules; self-inductance screen; top-level interconnects; Clocks; Delay effects; Electric resistance; Frequency; Impedance; Inductance; Integrated circuit interconnections; Pulse circuits; RLC circuits; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-0525-2
Type :
conf
DOI :
10.1109/ISQED.2000.838940
Filename :
838940
Link To Document :
بازگشت