DocumentCode
1954355
Title
Quick on-chip self- and mutual-inductance screen
Author
Lin, Shen ; Chang, Norman ; Nakagawa, Sam
Author_Institution
Hewlett-Packard Co., Palo Alto, CA, USA
fYear
2000
fDate
2000
Firstpage
513
Lastpage
520
Abstract
In this paper, based on simulations of top-level interconnects and CMOS devices of industrial 0.18 μm technology, the rules to screen out those inductive interconnects requiring more accurate RLC considerations, and the victim wires potentially having significant inductive noises are developed. The presented criteria constitute a tighter self-inductance screening rule than those found in previously published work. The 2×mutual inductance screening rule is presented and verified. The differences in on-chip inductance consideration, the significant frequency of a trapezoidal pulse, and the circuit modeling of on-chip inductance are also discussed
Keywords
CMOS digital integrated circuits; inductance; integrated circuit interconnections; integrated circuit modelling; integrated circuit noise; 0.18 micron; CMOS devices; circuit modeling; inductive interconnects; inductive noises; mutual-inductance screen; on-chip inductance screening rules; self-inductance screen; top-level interconnects; Clocks; Delay effects; Electric resistance; Frequency; Impedance; Inductance; Integrated circuit interconnections; Pulse circuits; RLC circuits; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-0525-2
Type
conf
DOI
10.1109/ISQED.2000.838940
Filename
838940
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