An efficient multi-band Monte Carlo model with anisotropic impact ionization

Author

Wang, X.L. ; Chandramouli, V. ; Maziar, C.M. ; Tasch, A.F.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

725

Lastpage

728

Abstract

A new impact ionization model for our multi-band Monte Carlo simulator SLAPSHOT (Simulation Program Suitable for Hot Carrier Studies) is described in this paper. The new model, based on a modified anisotropic Keldysh formula, uses a threshold energy calculated by invoking both energy and momentum conservation in full pseudopotential bands. The new model is used, together with experimental impact ionization data, to accurately estimate the extent of the high energy tail of the energy distribution function and appropriate electron-phonon coupling constants for use in second energy band carrier transport descriptions.<>

Keywords

Monte Carlo methods; digital simulation; electronic engineering computing; impact ionisation; semiconductor device models; Monte Carlo simulator; SLAPSHOT; anisotropic impact ionization; electron-phonon coupling constants; energy distribution function; hot carrier studies; modified anisotropic Keldysh formula; multiband Monte Carlo model; second energy band carrier transport descriptions; threshold energy; Impact ionization; Monte Carlo methods; Semiconductor device modeling; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307461

Filename

307461