Title :
An efficient multi-band Monte Carlo model with anisotropic impact ionization
Author :
Wang, X.L. ; Chandramouli, V. ; Maziar, C.M. ; Tasch, A.F.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A new impact ionization model for our multi-band Monte Carlo simulator SLAPSHOT (Simulation Program Suitable for Hot Carrier Studies) is described in this paper. The new model, based on a modified anisotropic Keldysh formula, uses a threshold energy calculated by invoking both energy and momentum conservation in full pseudopotential bands. The new model is used, together with experimental impact ionization data, to accurately estimate the extent of the high energy tail of the energy distribution function and appropriate electron-phonon coupling constants for use in second energy band carrier transport descriptions.<>
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; impact ionisation; semiconductor device models; Monte Carlo simulator; SLAPSHOT; anisotropic impact ionization; electron-phonon coupling constants; energy distribution function; hot carrier studies; modified anisotropic Keldysh formula; multiband Monte Carlo model; second energy band carrier transport descriptions; threshold energy; Impact ionization; Monte Carlo methods; Semiconductor device modeling; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307461
