DocumentCode
1954466
Title
Analysis of uniform degradation in n-MOSFETS
Author
Selmi, L. ; Fiegna, C. ; Sangiorgi, E. ; Bez, R. ; Ricco, B.
Author_Institution
Dipartimento di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
729
Lastpage
732
Abstract
A reliable numerical model to compute the energy distribution of hot electrons in one dimensional MOS structures is used to investigate the role of carrier energy on the degradation induced by optically generated substrate hot electrons. Comparison with preliminary experimental results suggests that the degradation is mainly due to carriers with energy below the Si-SiO/sub 2/ energy barrier.<>
Keywords
hot carriers; insulated gate field effect transistors; iterative methods; semiconductor device models; simulation; NMOSFET; Si-SiO/sub 2/; Si-SiO/sub 2/ energy barrier; carrier energy; energy distribution; hot electrons; n-MOSFETS; numerical model; one dimensional MOS structures; optically generated substrate hot electrons; uniform degradation; Hot carriers; Insulated gate FETs; Iterative methods; Semiconductor device modeling; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307462
Filename
307462
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