Title :
Coupled thermal-fully hydrodynamic simulation of InP-based HBTs
Author :
Benvenuti, A. ; Ghione, G. ; Pinto, M.R. ; Coughran, W.M., Jr. ; Schryer, N.L.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
Abstract :
We analyzed the self-consistent thermal and electrical behavior of InP-GaInAs heterojunction bipolar transistors (HBTs) with a coupled 1D thermal-fully hydrodynamic model, discretized with an improved upwinding scheme. Taking advantage of the flexibility allowed by our software approach, the role of convective terms and thermal effects is demonstrated by comparison with previous models.<>
Keywords :
III-V semiconductors; digital simulation; electronic engineering computing; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal analysis; InP-GaInAs; InP-based HBTs; coupled thermal-fully hydrodynamic simulation; heterojunction bipolar transistors; thermal effects; upwinding scheme; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Semiconductor device modeling; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307464
