• DocumentCode
    1954565
  • Title

    Emission of electrons from a patterned negative electron affinity cathode

  • Author

    Santos, E.J.P. ; MacDonald, N.C.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    743
  • Lastpage
    746
  • Abstract
    We have developed a microelectronics process to achieve the negative electron affinity (NEA) effect on the exposed areas of a patterned p/sup ++/-GaAs chip. The process was also extended to fabricate multielectrode NEA cathodes. The ability to selectively emit electrons from small areas can have applications in NEA-based vacuum microelectronic devices, projection e-beam lithography tools, and combinations of bulk devices with vacuum electronic emitters. Such instruments can take advantage of the cold operation, monochromaticity and high brightness of NEA cathodes.<>
  • Keywords
    cathodes; electron affinity; electron field emission; gallium arsenide; semiconductor technology; sputtering; vacuum microelectronics; GaAs; NEA cathode fabrication; microelectronics process; multielectrode NEA cathodes; negative electron affinity effect; patterned negative electron affinity cathode; patterned p/sup ++/-GaAs chip; projection e-beam lithography tools; vacuum electronic emitters; vacuum microelectronic devices; Cathodes; Electron emission; Gallium compounds; Semiconductor device fabrication; Sputtering; Vacuum microelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307465
  • Filename
    307465