Title :
Vertical-injection depleted optical thyristor laser diode for optical communication systems
Author :
Choi, W.K. ; Kim, D.G. ; Choi, Y.W. ; Kim, J.H. ; Byun, Y.T. ; Lee, S. ; Woo, D.H. ; Kim, S. Hi
Author_Institution :
Sch. of Electr. & Electron. Eng., Chungang Univ., Seoul, South Korea
Abstract :
We demonstrate, for the first time, the vertical-injection depleted optical thyristor laser diode (VIDOT-LD) with InGaAs/InGaAsP MQW structure. The output peak wavelength is at 1578 nm and the lasing threshold current is 131 mA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical switches; photothyristors; quantum well lasers; 131 mA; 1578 nm; InGaAs-InGaAsP; InGaAs/InGaAsP MQW; laser diode; optical communication systems; optical switching device; optical thyristor; vertical-injection depleted thyristor;
Conference_Titel :
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
1-55752-772-5
