• DocumentCode
    1954608
  • Title

    In-situ cleaning for highly reliable 1.3-/spl mu/m InGaAlAs buried heterostructure laser

  • Author

    Sato, H. ; Tsuchiya, Takao ; Kitatani, T. ; Taike, A. ; Uchiyama, H. ; Shinoda, K. ; Takahashi, N. ; Nakahara, K. ; Aoki, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    1
  • fYear
    2004
  • fDate
    23-27 Feb. 2004
  • Firstpage
    151
  • Abstract
    An in-situ cleaned and regrown 1.3-/spl mu/m InGaAIAs buried heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 2000-hour aging test.
  • Keywords
    III-V semiconductors; ageing; cleaning; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor device reliability; semiconductor growth; semiconductor lasers; 1.3 mum; 2000 hour; InGaAlAs; InGaAlAs laser; aging test; buried heterostructure laser; in-situ cleaning; laser fabrication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference, 2004. OFC 2004
  • Conference_Location
    Los Angeles, CA, USA
  • Print_ISBN
    1-55752-772-5
  • Type

    conf

  • Filename
    1359215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1954608