Title :
High performance GeSi quantum-well PMOS on SIMOX
Author :
Nayak, D.K. ; Park, J.S. ; Woo, J.C.S. ; Wang, K.L. ; Yabiku, G.K. ; MacWilliams, K.P.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A new quantum-well GeSi-SIMOX PMOSFET is presented. The device consists of a Si/Ge/sub 0.3/Si/sub 0.7//Si quantum well, which is grown pseudomorphically on a SIMOX substrate. The effective channel mobility of this device has been found to be 90% higher than that of an identically processed conventional SIMOX PMOSFET.<>
Keywords :
Ge-Si alloys; SIMOX; carrier mobility; elemental semiconductors; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor quantum wells; silicon; MBE; SIMOX substrate; Si-GeSi-Si; Si/Ge/sub 0.3/Si/sub 0.7//Si quantum well; effective channel mobility; pseudomorphic growth; quantum-well GeSi-SIMOX PMOSFET; Charge carrier mobility; Epitaxial growth; Germanium alloys; Insulated gate FETs; Quantum wells; SIMOX; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor materials; Silicon; Silicon alloys;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307473
