Title :
Hot electron induced hydrogen compensation of boron doped silicon resulting from emitter-base breakdown
Author :
Dunkley, J. ; Ganschow, G. ; Hannaman ; Patterson, J. ; Willard, S. ; Gopi, P.
Author_Institution :
Silicon Syst. Inc., Tustin, CA, USA
Abstract :
Large positive drifts in the emitter-base breakdown voltage (BVebo) by as much as 1.5 volts have been observed on devices utilizing blanket deposited silicon nitride layers. The large magnitude of the drift has been explained by the electrical neutralization of boron by the formation of boron-hydrogen bonds when the emitter-base junction is avalanched. The blanket nitride layer acts as a source of hydrogen as well as a barrier which traps hydrogen in the oxide under the nitride layer.<>
Keywords :
bipolar transistors; boron; dielectric thin films; electric breakdown of solids; elemental semiconductors; hot carriers; nitridation; silicon; silicon compounds; 1.5 V; Si/sub 3/N/sub 4/; Si:B; blanket deposited silicon nitride layers; boron-hydrogen bonds; capacitor dielectric; electrical neutralization; emitter-base breakdown; hot electron induced hydrogen compensation; npn transistors; positive drifts; Bipolar transistors; Boron; Dielectric films; Electric breakdown; Hot carriers; Silicon; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307475
