DocumentCode :
1954852
Title :
Performance Limitations of Deep-Submicron Fully Depleted Soi Mosfet´s
Author :
Fossum, J.G. ; Krishnan, S. ; Yeh, P.C.
Author_Institution :
VLSI TCAD Group, University of Florida, Gainesville, FL
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
132
Lastpage :
133
Keywords :
Degradation; Electron devices; Loss measurement; MOSFET circuits; Nonuniform electric fields; Performance analysis; Temperature control; Ultra large scale integration; Velocity measurement; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664828
Filename :
664828
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1954852
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