DocumentCode
1954892
Title
Soft-error evaluation using proton microprobe for DRAMs
Author
Sayama, H. ; Hara, S. ; Kimura, H. ; Ohno, Y. ; Satoh, S. ; Takai, M.
Author_Institution
Fac. of Eng. Sci., Osaka Univ., Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
815
Lastpage
818
Abstract
A system for evaluation of soft-errors in Mbit DRAM was developed using 400 keV proton microprobes to reveal the correlation between an incident position of protons and susceptibility against soft-errors in a memory chip. A cell mode and a bit-line mode could be specified by incident positions of protons. Soft-errors were induced by the proton incidence within about 6 mu m around the memory cell, in particular easily induced within 4 mu m. Such regions in which soft-errors is induced by the proton incidence were found not to depend on the spot size of proton microprobes.<>
Keywords
DRAM chips; errors; integrated circuit testing; ion beam applications; 400 keV; Mbit DRAM; bit-line mode; cell mode; dynamic RAM testing; memory chip; proton microprobe; soft-error evaluation; DRAM chips; Error analysis; Integrated circuit testing; Ion beam applications;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307479
Filename
307479
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