Title :
Soft-error evaluation using proton microprobe for DRAMs
Author :
Sayama, H. ; Hara, S. ; Kimura, H. ; Ohno, Y. ; Satoh, S. ; Takai, M.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
Abstract :
A system for evaluation of soft-errors in Mbit DRAM was developed using 400 keV proton microprobes to reveal the correlation between an incident position of protons and susceptibility against soft-errors in a memory chip. A cell mode and a bit-line mode could be specified by incident positions of protons. Soft-errors were induced by the proton incidence within about 6 mu m around the memory cell, in particular easily induced within 4 mu m. Such regions in which soft-errors is induced by the proton incidence were found not to depend on the spot size of proton microprobes.<>
Keywords :
DRAM chips; errors; integrated circuit testing; ion beam applications; 400 keV; Mbit DRAM; bit-line mode; cell mode; dynamic RAM testing; memory chip; proton microprobe; soft-error evaluation; DRAM chips; Error analysis; Integrated circuit testing; Ion beam applications;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307479
