Title :
Modal properties of isolated layer longitudinal leaky acoustic wave
Author :
Zhgoon, S. ; Shvetsov, A. ; Bhattacharjee, K.
Author_Institution :
Dept. of Radio Eng. Fundamentals, Moscow Power Eng. Inst., Moscow, Russia
Abstract :
In order to fabricate cavityless wafer level packaged devices based on longitudinal leaky surface (LLSAW) waves one has to find a coating with wave velocity approaching that of diamond. As diamond deposition conditions are prohibitive for SAW device technology so far, only the isolated layer acoustic wave (ILAW) approach may be used. We report on the possibility to use acoustic mirror stacks for isolated layer longitudinal leaky acoustic waves (ILLLAW) on LiNbO3 and on the properties of the modes that may exist in this complicated structure with varying thickness of individual layers. 3D FE modeling of the infinite periodical transducer structure is confirmed by in-situ monitoring of the deposited Simax and HfO2 layers of the structure. Degradation of the initial modes, birth of higher order modes, and their dynamics during growth of layers are described in detail. Isolation of the ILLLAW from the absorbing coatings on the top surface of the structure is confirmed.
Keywords :
surface acoustic wave devices; wafer level packaging; SAW device technology; cavityless wafer level packaged devices fabrication; isolated layer longitudinal leaky acoustic wave; longitudinal leaky surface waves; modal properties; Acoustic waves; Admittance; Electrodes; Periodic structures; Resonant frequency; Surface acoustic wave devices; HfO2; LLSAW; SiO2; Simax; cavityless wafer-level packaging; finite element modeling; isolated layer longitudinal leaky acoustic waves; lithium niobate; periodic structures; resonator;
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0382-9
DOI :
10.1109/ULTSYM.2010.5935608
