Title :
Hot-Carrier Reliability of Fully Depleted Accumulation Mode Soi Mosfets
Author :
Acovic, A. ; Wang, L.K. ; Brady, F. ; Haddad, N.
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Heights, New York
Keywords :
CMOS technology; Circuits; Degradation; Doping; Electrons; Hot carriers; MOSFETs; Stress; Threshold voltage; Very large scale integration;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664829
