Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant

Author

Sadana, D.K. ; Acovic, A. ; Shahidi, G. ; Hanafi, H. ; Warren, A.C. ; Grutzmacher, D. ; Cardone, F. ; Sun, J. ; Davari, B.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

849

Lastpage

852

Abstract

The experimentally observed V/sub T/ roll-off and Drain Induced Barrier Lowering (DIBL) at channel lengths of approximately=0.2 mu m in Si-MOSFETs is underestimated by conventional 2D numerical simulations. In this paper it is shown that this is due to B segregation from the channel region towards the As-implanted source/drain regions during the As activation anneal. The resulting B depletion close to the source and drain lowers the local V/sub T/ and contributes significantly (up to 50% in 0.2 mu m n-channel MOSFETs) to the V/sub T/ roll-off and DIBL in sub-quarter micron NMOSFETs. This B redistribution originates mainly from ion implantation damage in the source and drain.<>

Keywords

arsenic; boron; doping profiles; elemental semiconductors; impurity distribution; insulated gate field effect transistors; ion implantation; segregation; silicon; 0.2 to 0.25 micron; 2D numerical simulations; As activation anneal; As source; As-implanted source/drain regions; B depletion; B redistribution; B segregation; NMOSFETs; Si MOSFETs; Si:As,B; drain implant; drain induced barrier lowering; ion implantation damage; n-channel MOSFETs; short-channel effects; sub-quarter micron devices; Boron; Insulated gate FETs; Ion implantation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307490

Filename

307490