DocumentCode
1955162
Title
Extremely low threshold current operation of 638 nm GaInP/AlGaInP strained MQW lasers
Author
Mannoh, M. ; Kamiyama, S. ; Hoshina, J. ; Kidoguchi, I. ; Ohta, H. ; Ishibashi, A. ; Ban, Y. ; Ohnaka, K.
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
867
Lastpage
870
Abstract
Transverse-mode stabilized GaInP/AlGaInP strained multiquantum well lasers emitting at 638 nm were grown on a 15 degrees off
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser frequency stability; laser modes; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 37 mA; 638 nm; 95 degC; GaInP-AlGaInP-GaAs; GaInP/AlGaInP strained MQW lasers; abrupt interface; coated facets; crystal quality; high temperature operation; low threshold current operation; metalorganic vapor phase epitaxy; monolayer fluctuation; transverse-mode stabilized lasers; Aluminum compounds; Epitaxial growth; Gallium compounds; Indium compounds; Laser modes; Laser stability; Quantum wells; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307494
Filename
307494
Link To Document