Title :
Microwave high power MSM PD at 1.55 μm with optimal gradual heterojunction
Author_Institution :
Electron. Dept., Nat. Telecommun. Inst., Cairo, Egypt
Abstract :
Using a 2-D physical model we present a theoretical study of the parameters that affect the saturation condition of an MSM PD under high optical power at 1.55 μm wavelength modulated at 40 GHz. We also report that, with an MSM operating at 40 GHz, we can expect a saturation limit with a maximum microwave power of 17 dBm due to the space charge effect
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; microwave photonics; optical communication equipment; optical modulation; photodiodes; semiconductor device models; space charge; 1.55 mum; 2-D physical model; 40 GHz; AlInAs-GaInAs; high optical power; microwave high power MSM PD; optimal gradual heterojunction; saturation condition; space charge effect; Electrodes; Heterojunctions; High speed optical techniques; Lighting; Optical attenuators; Optical modulation; Optical receivers; Optical saturation; Photodetectors; Photodiodes;
Conference_Titel :
Radio Science Conference, 2000. 17th NRSC '2000. Seventeenth National
Conference_Location :
Minufiya
Print_ISBN :
977-5031-64-8
DOI :
10.1109/NRSC.2000.838975
