DocumentCode

1955194

Title

New Gate Electrodes for Fully-Depleted Soi/cmos; Tin and Poly Si-Ge

Author

Hwang, Jeong-mo ; Pollack, Gordon

Author_Institution

Semiconductor Process & Design Center, Texas Instruments Inc.

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

148

Lastpage

149

Keywords

CMOS technology; Capacitive sensors; Electrodes; Implants; Instruments; Oxidation; Process design; Sputter etching; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.1992.664835

Filename

664835