DocumentCode :
1955213
Title :
FEM/BEM simulation of SAW components with electrode passivation by anodic oxidation
Author :
Mayer, M. ; Dadgar-Javid, Gholamreza ; Sauer, W. ; Gartner, Thomas ; Wagner, Karl ; Zaglmayr, Sabine
Author_Institution :
Surface Acoust. Wave Components, EPCOS AG, Munich, Germany
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
171
Lastpage :
174
Abstract :
In order to reduce the sensibility of SAW components to surface contamination and avoid short cuts between electrodes, anodic oxidation is employed to passivate the electrode with a thin dielectric layer. This layer covers the electrodes, but not the regions between electrodes. Since for these structures, only part of the electrode/substrate interface carries charge, the efficient standard ab inito simulation method for SAW devices, based on the approximation of charge localization at the electrode/substrate interface, is not directly applicable. In this work this approach is generalized to devices passivated by anodic oxidation. As in the prior scheme, electrodes are treated as purely mechanical and introduction of an orthogonal Chebyshev basis set leads to an efficient Finite element/Boundary element (FEM/BEM) coupling scheme. For test resonators on 42°YX lithium tantalate the method is verified. Comparison with the Finite Element method shows that the underlying approximation of a purely mechanical electrode is justified. A good agreement with measurement is obtained.
Keywords :
ab initio calculations; anodisation; boundary-elements methods; finite element analysis; lithium compounds; passivation; surface acoustic wave devices; surface contamination; FEM/BEM simulation; LiTaO3; SAW components; SAW devices; ab inito simulation; anodic oxidation; boundary element method; charge localization; dielectric layer; electrode passivation; electrode/substrate interface; finite element method; lithium tantalate; orthogonal Chebyshev basis; surface contamination; Chebyshev approximation; Electrodes; Finite element methods; Lithium; Oxidation; Passivation; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
ISSN :
1948-5719
Print_ISBN :
978-1-4577-0382-9
Type :
conf
DOI :
10.1109/ULTSYM.2010.5935616
Filename :
5935616
Link To Document :
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