DocumentCode :
1955271
Title :
Simulating the Radiation Performance of Simox Buried Oxides Using a Trap-Detrap Model
Author :
Kimoton, D. ; Kerr, John
Author_Institution :
Plessey Semiconductors Ltd., United Kingdom
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
156
Lastpage :
157
Keywords :
Accuracy; Charge measurement; Current measurement; MOSFETs; Power measurement; Predictive models; Radiation hardening; Radiative recombination; Silicon compounds; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664838
Filename :
664838
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1955271
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