Title :
Quality of Gate Oxides Grown on State of the Art Simox and Zmr Soi Substrates
Author :
Karulkar, Prarnod C.
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA
Keywords :
Contamination; Design for quality; Electric breakdown; Laboratories; MOSFETs; Materials reliability; Oxidation; Pollution measurement; Silicon on insulator technology; Voltage;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664839
