An SPDD p-MOSFET structure suitable for 0.1 and sub 0.1 micron channel length and its electrical characteristics

Author

Saito, M. ; Yoshitomi, T. ; Ono, M. ; Akasaka, Y. ; Nii, H. ; Matsuda, S. ; Momose, H.S. ; Katsumata, Y. ; Ushiku, Y. ; Iwai, H.

Author_Institution

ULSI Res. Center, Toshiba Corp., Kawasaki, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

897

Lastpage

900

Abstract

A new solid-phase diffused drain (SPDD) structure has been developed for 0.1 and sub-0.1 um p-MOSFET technology. Highly doped ultra-shallow p/sup +/ source and drain junctions were achieved by solid-phase diffusion from the highly doped BSG sidewall. The extremely shallow and high concentration drain profile significantly improved short channel effects without increasing parasitic resistance. The excellent electrical characteristics and good hot-carrier reliability of the SPDD p-MOSFET are demonstrated.<>

Keywords

hot carriers; insulated gate field effect transistors; rapid thermal processing; reliability; semiconductor technology; 0.1 micron; SPDD p-MOSFET structure; channel length; drain profile; electrical characteristics; highly doped BSG sidewall; hot-carrier reliability; p-MOSFET technology; short channel effects; solid-phase diffused drain structure; ultra-shallow p/sup +/ junctions; Hot carriers; Insulated gate FETs; Rapid thermal processing; Reliability; Semiconductor device fabrication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307501

Filename

307501