Title :
An SPDD p-MOSFET structure suitable for 0.1 and sub 0.1 micron channel length and its electrical characteristics
Author :
Saito, M. ; Yoshitomi, T. ; Ono, M. ; Akasaka, Y. ; Nii, H. ; Matsuda, S. ; Momose, H.S. ; Katsumata, Y. ; Ushiku, Y. ; Iwai, H.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A new solid-phase diffused drain (SPDD) structure has been developed for 0.1 and sub-0.1 um p-MOSFET technology. Highly doped ultra-shallow p/sup +/ source and drain junctions were achieved by solid-phase diffusion from the highly doped BSG sidewall. The extremely shallow and high concentration drain profile significantly improved short channel effects without increasing parasitic resistance. The excellent electrical characteristics and good hot-carrier reliability of the SPDD p-MOSFET are demonstrated.<>
Keywords :
hot carriers; insulated gate field effect transistors; rapid thermal processing; reliability; semiconductor technology; 0.1 micron; SPDD p-MOSFET structure; channel length; drain profile; electrical characteristics; highly doped BSG sidewall; hot-carrier reliability; p-MOSFET technology; short channel effects; solid-phase diffused drain structure; ultra-shallow p/sup +/ junctions; Hot carriers; Insulated gate FETs; Rapid thermal processing; Reliability; Semiconductor device fabrication;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307501
