Terahertz quasi-optical modulators based on integrated p-i-n-structures

Author

Grimalsky, V. ; Koshevaya, S. ; Moroz, I. ; Kishenko, Ya. ; Tecpoyotl-T, M.

Author_Institution

Nat. Inst. for Astrophys., Opt., & Electron., Puebla, Mexico

Volume

3

fYear

2002

fDate

2002

Firstpage

739

Abstract

Theoretical and experimental investigations of silicon surface oriented integrated p-i-n structures as quasi-optical modulators of terahertz frequency range have been done. The problem of double injection into the i-region has been solved numerically, and a possible role of nonlinearity in boundary conditions at injecting junctions is pointed out. Our simulations demonstrate that an effective modulation of terahertz wave beams by Si p-i-n structures can be achieved up to 2-2.5 THz frequencies. Measurements at 400 GHz confirm the results of simulations. A possibility of modulation of picosecond monopulses is also investigated.

Keywords

elemental semiconductors; infrared detectors; microwave photonics; optical modulation; p-i-n photodiodes; semiconductor device models; silicon; submillimetre wave detectors; 2 to 2.5 THz; 400 GHz; Si; Si p-i-n structures; frequency range; i-region double injection; injecting junction boundary conditions nonlinearity; integrated p-i-n structures; monopulse modulation; silicon surface oriented integrated p-i-n structures; simulations; terahertz quasi-optical modulators; terahertz wave beam modulation; Boundary conditions; Diodes; Electromagnetic measurements; Frequency modulation; Gallium arsenide; Laser tuning; Optical modulation; Optical surface waves; Oscillators; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on

Print_ISBN

83-906662-5-1

Type

conf

DOI

10.1109/MIKON.2002.1017948

Filename

1017948