DocumentCode :
1955380
Title :
Movpe Growth of InGaAs/lnAIAs Using Trimethylamine Alane Four Photonic and Electronic Devices
Author :
Kohzen, A. ; Tohmori, Y. ; Akatsu, Y.
Author_Institution :
NTT Opto-electronics Laboratories, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
2
Lastpage :
3
Keywords :
Artificial intelligence; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; Quantum well devices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664846
Filename :
664846
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1955380
بازگشت