Anomalous behaviour of surface leakage currents in heavily-doped MOS structures

Author

Hurkx, G.A.M. ; Peek, H.L. ; Slotboom, J.W. ; Windgassen, R.A.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

919

Lastpage

922

Abstract

The anomalous gate voltage- and dopant dependence of surface leakage currents in heavily-doped MOS gated-diode structures is described. It is shown that, by using a recombination model which includes tunnelling effects, a good quantitative description of surface leakage currents can be obtained. This resulted in a revision of the classical description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented.<>

Keywords

doping profiles; electron-hole recombination; heavily doped semiconductors; leakage currents; metal-insulator-semiconductor structures; semiconductor device models; tunnelling; MOS gated-diode structures; anomalous behaviour; dopant dependence; gate voltage dependence; heavily-doped MOS structures; recombination model; surface leakage currents; tunnelling effects; Charge carrier lifetime; Leakage currents; MIS devices; Semiconductor device modeling; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307506

Filename

307506

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1955414