DocumentCode :
1955459
Title :
New Precursor for Epitaxial Growth of Indium Phosphide Synthesis and vapor pressure studies
Author :
Souliere, V. ; Abraham, Pierre ; Bouix, J. ; Monteil, Y.
Author_Institution :
Laboratoire De Physico-Chimie Minerale, Universite Lyon I, France
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
11
Lastpage :
12
Keywords :
Displays; Epitaxial growth; Epitaxial layers; Indium phosphide; Material storage; Pollution measurement; Pressure measurement; Raman scattering; Spectroscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664851
Filename :
664851
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1955459
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