InP-based 1.55 μm high-speed photodetectors for 80 Gbit/s systems and beyond

Author

Beling, A. ; Bach, H.-G. ; Kunkel, R. ; Mekonnen, G.G. ; Schmidt, D.

Author_Institution

Heinrich-Hertz-Inst., Berlin, Germany

Volume

1

fYear

2005

fDate

3-7 July 2005

Firstpage

303

Abstract

The paper reviews the key characteristics of recent developments in the field of ultra fast photodetectors for 1.55 μm wavelength. In detail, we report on a fully packaged highly efficient photodetector with 100 GHz bandwidth, suitable for 160 Gbit/s return-to-zero (RZ) detection. Furthermore, a monolithically integrated balanced photodetector is described, to be applied for direct detection of 80 Gbit/s differential phase shift keyed (DPSK) transmission formats. Achievements in the development of travelling wave photodetectors are summarized.

Keywords

III-V semiconductors; MMIC; differential phase shift keying; indium compounds; p-i-n photodiodes; photodetectors; 1.55 micron; 100 GHz; 160 Gbit/s; 80 Gbit/s; DPSK transmission format; InP; RZ; differential phase shift keying; high-speed photodetector; monolithically integrated balanced photodetector; pin photodiode; return-to-zero detection; travelling wave photodetector; Bandwidth; High speed optical techniques; Indium phosphide; Optical fiber networks; Optical fiber polarization; Optical surface waves; Optical waveguides; PIN photodiodes; Page description languages; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2005, Proceedings of 2005 7th International Conference

Print_ISBN

0-7803-9236-1

Type

conf

DOI

10.1109/ICTON.2005.1505811

Filename

1505811