Title :
Complete bipolar simulation using STORM
Author :
Jones, S.K. ; Gerodolle, A. ; Lombardi, C. ; Schafer, M. ; Hill, C.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<>
Keywords :
bipolar integrated circuits; digital simulation; electronic engineering computing; elemental semiconductors; semiconductor device models; semiconductor process modelling; silicon; 2D device modelling; 2D process modelling; STORM; Si; advanced double layer polysilicon bipolar technology; bipolar simulation; nonplanar polysilicon topographies; perimeter depletion effect; polysilicon emitter size scaling; simulation environment; Bipolar integrated circuits; Semiconductor device modeling; Semiconductor process modeling; Silicon; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307509
