Title :
Fabrication and operation of MOS tunneling cathode
Author :
Yokoo, K. ; Sato, S. ; Tanaka, H. ; Murota, J. ; Ono, S.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We have fabricated a MOS electron tunneling cathode with ultrathin SiO/sub 2/ and examined the emission characteristics. We found that the emission occurred from an entire gate area by electron tunneling through the potential barrier in the MOS diode and the emission current was 0.7% of the total current flowing through the diode. Additionally, the emission was found to be nearly independent of pressure and to be stable in an amorphous Si gate MOS cathode.<>
Keywords :
cathodes; electron emission; metal-insulator-semiconductor devices; tunnelling; MOS diode; MOS tunneling cathode; Si-SiO/sub 2/-Al; amorphous Si gate; electron tunneling; fabrication; potential barrier; ultrathin SiO/sub 2/; Cathodes; Electron emission; MIS devices; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307517
