Title :
Simulation of GaAs MESFET process yield from RF large signal figures-of-merit
Author :
Stoneking, D.E. ; Trew, R.J.
Author_Institution :
Dept. of Electron. Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A simulator for calculating MESFET large-signal figures of merit and their sensitivities with respect to various device design, material, and operational parameters has been developed. User-defined large-signal figures-of-merit, such as the linear gain, the RF output power at various gain compression levels, and the maximum power-added efficiency, can be calculated over any range of process, material, parasitic, and bias parameters. This capability allows, for the first time, process yield under large-signal RF conditions to be investigated before fabrication. In this manner, computer-aided design centering for high process yield is made possible.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; digital simulation; gallium arsenide; GaAs; MESFET process yield; RF output power; bias parameters; computer-aided design centering; gain compression levels; large-signal figures of merit; linear gain; operational parameters; parasitic parameters; power-added efficiency; Circuit simulation; Gain; Gallium arsenide; Implants; MESFETs; Power generation; RF signals; Radio frequency; Signal processing; Statistical distributions;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69345
