Coherent THz emission from optically excited intrasubband plasmons in single quantum wells

Author

Vosseburger, M. ; Hering Bolivar, P. ; Sekine, N. ; Yamanaka, K. ; Hirakawa, K. ; Kurz, H.

Author_Institution

Inst. fur Halbleitertech. II, Tech. Hochschule Aachen, Germany

fYear

1998

fDate

8-8 May 1998

Firstpage

150

Lastpage

151

Abstract

Summary form only given.We present the first measurements of optically excited intrasubband plasmons in modulation-doped GaAs single quantum wells. The sample is excited under an incident angle of 45 degrees with 100-fs pulses from a Ti:sapphire laser operating at a photon energy of 1.596 eV. Radiative plasmon modes emit THz pulses via a 3-/spl mu/m grating coupler on top of the sample. The emitted THz radiation is collected by two paraboloidal mirrors and detected with an ion implanted silicon-on-sapphire antenna, which is gated with a time-delayed second part of the laser beam.

Keywords

III-V semiconductors; carrier density; gallium arsenide; plasmons; semiconductor doping; semiconductor quantum wells; submillimetre wave spectra; 1.596 eV; 100 fs; GaAs; THz pulses; Ti:sapphire laser; coherent THz emission; emitted THz radiation; grating coupler; incident angle; modulation-doped GaAs single quantum wells; optically excited intrasubband plasmons; paraboloidal mirrors; photon energy; radiative plasmon modes; silicon-on-sapphire antenna; single quantum wells; Epitaxial layers; Gallium arsenide; Gratings; Laser excitation; Laser modes; Optical modulation; Optical pulses; Plasmons; Quantum well lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680315

Filename

680315