High-frequency characterization of 30 GHz p-type modulation-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers

Author

Weisser, S. ; Ralston, J.D. ; Larkins, E.C. ; Esquivias, I. ; Tasker, P.J. ; Fleissner, J. ; Rosenzweig, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

1009

Lastpage

1011

Abstract

We report the first semiconductor laser to achieve a direct modulation bandwidth of 30 GHz, using p-type modulation-doped (MD) In/sub 0.35/Ga/sub 0.65/As/GaAs QWs. The high-speed properties of lasers with both MD and undoped active regions, but otherwise identical epilayer structures, are compared. The doped lasers demonstrate modulation bandwidths of 20 GHz and 30 GHz at CW bias currents of 50 mA and 114 mA, respectively, in a simple 3*200 mu m/sup 2/ mesa structure.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; 114 mA; 20 GHz; 30 GHz; 50 mA; CW bias currents; In/sub 0.35/Ga/sub 0.65/As/GaAs; InGaAs-GaAs; direct modulation bandwidth; epilayer structures; high-frequency characterization; mesa structure; modulation bandwidths; modulation-doped active regions; p-type modulation-doped MQW lasers; semiconductor laser; undoped active regions; Gallium compounds; Indium compounds; Optical modulation; Quantum wells; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307531

Filename

307531