Title :
Fabrication of nanobeam using Focused ion beam (FIB) and KOH etching
Author :
Cheng, Haitao ; Yang, Heng ; Wang, Yuelin
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai
Abstract :
A new process method is developed to fabricate beam into nanometer scale in width. Assisted by Focused ion beam (FIB), one 122 nm silicon nanobeam is obtained on (110) Silicon-On-Insulator (SOI) substrate, based on the material and process properties of crystal silicon. After KOH etching, sidewalls with (111) terminations are all vertical to (110) surface plane. This presented process method has some merits such as no surface damage, high processing resolution, and good repeatability.
Keywords :
focused ion beam technology; nanoelectromechanical devices; nanofabrication; silicon-on-insulator; sputter etching; KOH etching; focused ion beam; high processing resolution; nanobeam fabrication; silicon nanobeam; silicon-on-insulator substrate; Anisotropic magnetoresistance; Electron beams; Fabrication; Ion beams; Lithography; Micromechanical devices; Nanoelectromechanical systems; Silicon on insulator technology; Substrates; Wet etching; FIB; Nanobeam; anisotropic etching;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068544
