Hot carrier degradation in 70 nm gate length MOSFETs with new double punchthrough stopper structure

Extremely short channel MOSFET with 70 nm physical gate length has been fabricated. This MOSFET employs a new double punchthrough stopper structure to mitigate the short channel effect and to improve the hot carrier immunity. It is demonstrated that 70 nm MOSFET successfully operates at 3 V supply voltage showing a small cut-off current of 1 pA, although the device characteristics are still degraded by the hot carrier stressing. The characteristics degradation of this device by hot carrier stressing is evaluated in detail using the charge pumping technique.<>