Driving a harmonic quantum oscillator with few-cycle THz pulses

Author

Kersting, R. ; Heyman, J.N. ; Hoffmann, R. ; Strasser, G. ; Maranowski, K.D. ; Gossard, A.C. ; Unterrainer, K.

Author_Institution

Inst. fur Festkorperelektronik, Tech. Univ. Wien, Austria

fYear

1998

fDate

8-8 May 1998

Firstpage

151

Abstract

Summary form only given. Quantum engineering of III-V semiconductors allows the realization of band structures with parabolic shape. Due to their equally spaced subbands, these quantum structures are ideal systems to study the dielectric response of charge carriers to an ultrafast electric field change. In our time-resolved studies we investigate the response of the electronic charge carrier system in a GaAs-AlGaAs parabolic quantum well (PQW) to an exciting fewcycle THz pulse.

Keywords

III-V semiconductors; aluminium compounds; band structure; gallium arsenide; high-speed optical techniques; semiconductor quantum wells; submillimetre wave spectra; time resolved spectra; GaAs-AlGaAs; GaAs-AlGaAs parabolic quantum well; III-V semiconductors; band structures; charge carriers; dielectric response; electronic charge carrier system; equally spaced subbands; exciting fewcycle THz pulse; few-cycle THz pulses; harmonic quantum oscillator driving; parabolic shape; quantum engineering; quantum structures; time-resolved studies; ultrafast electric field change; Charge carriers; Dielectrics; Frequency; Gallium arsenide; Laser beams; Laser excitation; Optical scattering; Oscillators; Plasma temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680316

Filename

680316