DocumentCode
1956077
Title
Simulation of levitation control for a micromachined electrostatically levitated gyroscope
Author
Qijun Xiao ; Wenyuan Chen ; Gaoyin Ma ; Feng Cui ; Shengyong Li ; Weiping Zhang
Author_Institution
Res. Inst. of Micro/Nanometer Sci. & Technol., Shanghai Jiaotong Univ., Shanghai
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
160
Lastpage
163
Abstract
An electrostatically levitated gyroscope based on UV-LIGA fabrication process is introduced. The stable levitation is vitally important for the gyroscope to work efficiently. Two types of levitation control model of such a device are presented to realize initial levitation. The axial squeeze film damping coefficient is calculated by finite element analysis and deduced by analytical solution. From the analysis of the proportional integral differential (PID) control completed by the bias and the feedback linearization control (FLC) without bias. It can be seen that the PID control with the bias can linearize the control equation near the null position and FLC can realize the large travel with desired dynamic performance and global stability. But it has steady-state error, which can be switched to the PID controller to minimize. At last, the levitation control system is constructed.
Keywords
LIGA; finite element analysis; gyroscopes; magnetic levitation; micromechanical devices; three-term control; ultraviolet lithography; UV-LIGA fabrication; axial squeeze film damping coefficient; feedback linearization control; finite element analysis; levitation control; micromachined electrostatically levitated gyroscope; proportional integral differential control; Damping; Electrostatic levitation; Fabrication; Finite element methods; Gyroscopes; Integral equations; Linear feedback control systems; Pi control; Proportional control; Three-term control; control; electrostatically; levitation; micro-gyroscope;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068549
Filename
5068549
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