Title :
Injection-enhanced defect reactions in III-V light emitting diodes
Author :
Torchinskaya, T.V. ; Rybak, A.M.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Injection-enhanced defect transformations in GaP LEDs with active layer doped by N (GaP:N), or N, Zn, and O (GaP:N,ZnO), as well as AlGaAs:Zn, AlGaAs:Ge, and GaAs:Si LEDs were investigated both theoretically and experimentally. Four principal types of defect transformations were determined to take place in these LEDs. Their nature and parameters were determined from the comparison of theoretical and experimental data.<>
Keywords :
III-V semiconductors; light emitting diodes; reliability; AlGaAs:Ge; AlGaAs:Zn; GaAs:Si; GaP:N; GaP:N,ZnO; III-V light emitting diodes; active layer; defect transformations; device reliability; injection-enhanced defect reactions; transformation parameters; Degradation; Diffraction; Etching; III-V semiconductor materials; Kinetic theory; Light emitting diodes; Photoconductivity; Physics; Semiconductor devices; Zinc;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307800
