Title :
Base and collector leakage currents and their relevance to the reliability of AlGaAs/GaAs heterojunction bipolar transistors
Author :
Liou, J.J. ; Parab, K.B. ; Huang, C.I. ; Bayraktaroglu, B. ; Williamson, D.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Base and collector leakage currents are extremely important to AlGaAs/GaAs heterojunction bipolar transistor (HBT) d.c. characteristics, and a simple model to describe such currents is presented. This study suggests that these currents are originated from the electron and hole leakage through the dielectric layer at the emitter-base and base-collector peripheries, as well as through the n/sup +/-subcollector/semi-insulating-substrate interface. The relevance of the leakage currents to the post-burn-in HBT behavior (e.g., current-gain degradation) is also investigated.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; reliability; semiconductor device testing; AlGaAs-GaAs; DC characteristics; base leakage currents; base-collector peripheries; collector leakage currents; current-gain degradation; dielectric layer; electron leakage; emitter-base peripheries; heterojunction bipolar transistors; hole leakage; n/sup +/-subcollector/semi-insulating-substrate interface; post-burn-in HBT behavior; reliability; Charge carrier processes; Current measurement; Degradation; Dielectrics; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Solid modeling; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307801
