Base and collector leakage currents and their relevance to the reliability of AlGaAs/GaAs heterojunction bipolar transistors

Author

Liou, J.J. ; Parab, K.B. ; Huang, C.I. ; Bayraktaroglu, B. ; Williamson, D.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1994

fDate

11-14 April 1994

Firstpage

446

Lastpage

453

Abstract

Base and collector leakage currents are extremely important to AlGaAs/GaAs heterojunction bipolar transistor (HBT) d.c. characteristics, and a simple model to describe such currents is presented. This study suggests that these currents are originated from the electron and hole leakage through the dielectric layer at the emitter-base and base-collector peripheries, as well as through the n/sup +/-subcollector/semi-insulating-substrate interface. The relevance of the leakage currents to the post-burn-in HBT behavior (e.g., current-gain degradation) is also investigated.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; reliability; semiconductor device testing; AlGaAs-GaAs; DC characteristics; base leakage currents; base-collector peripheries; collector leakage currents; current-gain degradation; dielectric layer; electron leakage; emitter-base peripheries; heterojunction bipolar transistors; hole leakage; n/sup +/-subcollector/semi-insulating-substrate interface; post-burn-in HBT behavior; reliability; Charge carrier processes; Current measurement; Degradation; Dielectrics; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307801

Filename

307801